The evolving potential of the hottest memory marke

The evolving potential of the memory market needs to be fully tapped

using the current manufacturing process, the size of DRAM capacitors and flash memory cells is close to the physical limit, and it is difficult to further reduce. Therefore, memory manufacturers invest more energy in developing alternative memory solutions other than DRAM and flash memory. Several kinds of special memory for specific purposes provide customers in the medical industry with new product choices and solutions, and the special memory is now available. Although these new products are unlikely to challenge batch products in the near future, they are at least possible to provide the following features: fast reading and writing with low power consumption; Non volatile, with long data retention time and cycle life; Smaller cell size

magnetoresistive RAM (MRAM), ferroelectric RAM (FRAM) and phase change RAM (PCRAM) are the most discussed alternatives to DRAM and flash memory. Compared with current DRAM and flash memory, the above technologies have their own advantages, but there are also some disadvantages from the perspective of cost or technology

the evolving potential of the memory market needs to be fully exploited.

resistor ramreram/rram is another possible choice. Fujitsu, Intel, Samsung, sharp and Spansion are all studying this technology. These manufacturers believe that ReRAM will be 100 times faster than flash memory, and its size will be better than other advanced memories such as phase change ram or MRAM

carbon nanotube (CNT) technology is also promising. In the near future, this technology may be used in system memory, and in the long term, it may be used in complex logic devices. Nanotube RAM (nram) cells are made of CNTs suspended on metal electrodes. When a weak bias voltage is applied to the nanotube, the nanotube will "sag" towards the electrode until it contacts. At this time, the nanotube is considered to be in the logic 1 state. When the bias voltage is cancelled, the nanotube leaves the electrode and the logic state returns to zero. The advantages of nram include that the speed and density of the components of Jinan assay impactor with SRAM are much higher than DRAM, and the power consumption is lower than DRAM and flash memory. In addition, it is not afraid of harsh environment, and has good miniaturization

in addition, the "memristor" recently announced by the manufacturer may be a breakthrough in industrial structure adjustment and transformation and upgrading of the technology that memory suppliers are eager to create a general memory. After memris completes 1.5 twists, tor is a kind of circuit element, which can improve the performance in the process of size reduction

icinsights, a market research company, firmly believes that the memory market (especially DRAM) is evolutionary, not revolutionary. Memory suppliers will continue to fully tap the potential of existing technologies/architectures until they have to switch to alternative memory technologies such as nanotube, PCRAM or MRAM. So far, no alternative memory can provide a sufficiently attractive solution to make it better than the existing memory